Thermal Compression Bonder for Semiconductor
Specification & Features:
- Product Type: strip and singular type of substrate
- Substrate Thickness ≦2mm
- Carrier size: Max. 323 (L) x160(W) X5.5(H) mm
- CCD function can detect defection
- Bonding Accuracy ≦ ±1um
- Chip size: Max 30(W) x30(L) mm
- Temperature of Upper/Lower stage is able to control separately. Multi-step temperature profile control available.
- Automatic Loading/Unloading System
- Temperature range: Room temperature to 400℃
- Force Control 70kg